SI4630DY-T1-E3
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Краткое описание:
N-CH MOSFET 25V 27A 2.7mR SOIC N
Дополнительная информация
N-channel MOSFET, 25V Vdss, 27A continuous drain current, and 2.7mR drain-source on-resistance. Features a 1.55mm height, 5mm length, and 4mm width SOIC package for surface mounting. Operates from -55°C to 150°C with a maximum power dissipation of 7.8W. Includes fast switching characteristics with a 9ns fall time and 17ns turn-on delay. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.006596oz |
| Polarity | N-CHANNEL |
| Fall Time | 9ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 2.7mR |
| Nominal Vgs | 1V |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 6.67nF |
| Power Dissipation | 3.5W |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 17ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 60ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 7.8W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 2.7mR |
| Gate to Source Voltage (Vgs) | 16V |
| Continuous Drain Current (ID) | 27A |
| Drain to Source Voltage (Vdss) | 25V |
| Drain-source On Resistance-Max | 2.7MR |
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