SI4630DY-T1-GE3
Производится
Увеличить
Краткое описание:
N-CH MOSFET 25V 40A 2.7mR SOIC Surface Mount
Дополнительная информация
N-channel MOSFET, 25V Drain-Source Voltage, 40A Continuous Drain Current, 2.7mΩ Drain-Source On-Resistance. Features a 1V Threshold Voltage, 9ns Fall Time, 17ns Turn-On Delay, and 60ns Turn-Off Delay. Surface mountable in an 8-pin SOIC package, operating from -55°C to 150°C with 7.8W Max Power Dissipation. RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | SI4 |
| Weight | 0.006596oz |
| Polarity | N-CHANNEL |
| Fall Time | 9ns |
| Packaging | Tape and Reel |
| Rds On Max | 2.7mR |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 6.67nF |
| Threshold Voltage | 1V |
| Number of Channels | 1 |
| Turn-On Delay Time | 17ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 60ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 7.8W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 2.7mR |
| Gate to Source Voltage (Vgs) | 16V |
| Continuous Drain Current (ID) | 40A |
| Drain to Source Voltage (Vdss) | 25V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
