SI4654DY-T1-E3
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Краткое описание:
N-CH MOSFET 25V 18.6A 4mR SO Surface Mount
Дополнительная информация
N-channel MOSFET, 25V drain-source voltage, 18.6A continuous drain current, and 4mΩ drain-to-source resistance at 10V gate-source voltage. Features 5.9W maximum power dissipation and a low Rds(on) of 4mΩ. This surface-mount component operates across a -55°C to 150°C temperature range, with fast switching characteristics including 30ns turn-on delay and 10ns fall time. Packaged in SO for tape and reel distribution.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.5mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.006596oz |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Packaging | Tape and Reel |
| Rds On Max | 4mR |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 3.77nF |
| Number of Channels | 1 |
| Turn-On Delay Time | 30ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 50ns |
| Max Power Dissipation | 5.9W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 4mR |
| Gate to Source Voltage (Vgs) | 16V |
| Continuous Drain Current (ID) | 18.6A |
| Drain to Source Voltage (Vdss) | 25V |
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