SI4686DY-T1-E3
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Краткое описание:
N-CH MOSFET 30V 13.8A 9.5mR SO Surface Mount
Дополнительная информация
N-channel MOSFET featuring 30V drain-source breakdown voltage and 13.8A continuous drain current. Offers low 9.5mΩ drain-source on-resistance and 1.22nF input capacitance. Designed for surface mount applications with a compact 8-SOIC package, operating from -55°C to 150°C. Includes fast switching characteristics with 8ns fall time, 20ns turn-on delay, and 20ns turn-off delay.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.006596oz |
| Polarity | N-CHANNEL |
| Fall Time | 8ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 9.5mR |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 1.22nF |
| Power Dissipation | 3W |
| Threshold Voltage | 3V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 20ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 20ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 5.2W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 9.5mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 13.8A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 9.5mR |
| Drain to Source Breakdown Voltage | 30V |
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