SI4688DY-T1-GE3
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Краткое описание:
N-CH JFET, 30V, 8.9A, 11mR RdsOn, SO, Surface Mount
Дополнительная информация
N-channel JFET with 30V Drain-to-Source Voltage (Vdss) and 11mΩ Drain-to-Source Resistance (Rds On Max). Features 8.9A Continuous Drain Current (ID), 1.58nF Input Capacitance, and 10ns Fall Time. Operates from -55°C to 150°C with 1.4W Max Power Dissipation. Surface mountable in an SO package, this RoHS compliant component is ideal for small signal applications.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.006596oz |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Packaging | Tape and Reel |
| Rds On Max | 11mR |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 1.58nF |
| Number of Channels | 1 |
| Turn-On Delay Time | 13ns |
| Turn-Off Delay Time | 33ns |
| Max Power Dissipation | 1.4W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 11mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 8.9A |
| Drain to Source Voltage (Vdss) | 30V |
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