SI4778DY-T1-E3

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SI4778DY-T1-E3 - Vishay(Siliconix)
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Краткое описание: N-CH MOSFET 25V 8A 23mR SO-8 Surface Mount
Производитель Vishay(Siliconix)
Статус производства Производится (VOLUME PRODUCTION)

Дополнительная информация

N-channel MOSFET, 25V Drain-to-Source Voltage, 8A Continuous Drain Current, and 23mΩ Rds On Max. This surface-mount component features a low input capacitance of 680pF and fast switching times with a 15ns turn-on delay and 20ns turn-off delay. Operating across a wide temperature range from -55°C to 150°C, it offers 5W maximum power dissipation. Packaged in an 8-SOIC case, this RoHS compliant component is supplied on tape and reel.
RoHS Compliant
Mount Surface Mount
Width 4mm
Height 1.5mm
Length 5mm
Series TrenchFET®
Weight 0.006596oz
Polarity N-CHANNEL
Fall Time 10ns
Packaging Tape and Reel
Rds On Max 23mR
Package/Case SO
RoHS Compliant Yes
Package Quantity 2500
Input Capacitance 680pF
Number of Channels 1
Turn-On Delay Time 15ns
Radiation Hardening No
Turn-Off Delay Time 20ns
Max Power Dissipation 5W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 23mR
Gate to Source Voltage (Vgs) 16V
Continuous Drain Current (ID) 8A
Drain to Source Voltage (Vdss) 25V

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