SI4800BDY-T1-GE3
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Краткое описание:
N-Channel JFET, 30V, 6.5A ID, 18.5mR Rds(on), SO Package
Дополнительная информация
N-channel silicon JFET with 30V drain-source voltage and 6.5A continuous drain current. Features 18.5mΩ maximum drain-source on-resistance and 1.3W maximum power dissipation. Operates from -55°C to 150°C in a surface-mount SO package. Includes 7ns turn-on delay and 12ns fall time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.006596oz |
| Polarity | N-CHANNEL |
| Fall Time | 12ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 18.5mR |
| Nominal Vgs | 25V |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Number of Channels | 1 |
| Turn-On Delay Time | 7ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 32ns |
| Max Power Dissipation | 1.3W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 18.5mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 6.5A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 18.5mR |
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