SI4816BDY-T1-E3
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Краткое описание:
2 N-CH MOSFET 30V 8.2A 18.5mR SO Surface Mount
Дополнительная информация
Dual N-channel MOSFET featuring 30V drain-source voltage and 8.2A continuous drain current. Surface mountable in an 8-SOIC package, this component offers a low drain-source on-resistance of 18.5mR maximum. Operating across a wide temperature range of -55°C to 150°C, it boasts fast switching speeds with a fall time of 9ns. RoHS compliant and lead-free, this device is suitable for various electronic applications.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | LITTLE FOOT® |
| Weight | 0.006596oz |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 9ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 18.5mR |
| Nominal Vgs | 3V |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Threshold Voltage | 1V |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Turn-On Delay Time | 13ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 31ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 1.25W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 11.5mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 8.2A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 18.5mR |
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