SI4816BDY-T1-GE3
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Краткое описание:
N-Channel JFET, 30V, 5.8A ID, 18.5mR Rds On, 2-Element, SOP-8
Дополнительная информация
N-Channel Silicon JFET, 2-Element, Surface Mount device with 30V Drain-to-Source Voltage (Vdss) and 5.8A Continuous Drain Current (ID). Features include a 3V Threshold Voltage, 18.5mR Max Drain-Source On-Resistance, and 9.3mR Drain to Source Resistance. Operates from -55°C to 150°C with 1.25W Max Power Dissipation. Packaged in SO (SOP-8) for tape and reel, this device is HALOGEN FREE and ROHS COMPLIANT.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | LITTLE FOOT® |
| Weight | 0.006596oz |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 9ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 18.5mR |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Threshold Voltage | 3V |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Turn-On Delay Time | 13ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 31ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 1.25W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 9.3mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 5.8A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 18.5mR |
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