SI4823DY-T1-E3

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SI4823DY-T1-E3 - Vishay(Siliconix)
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Краткое описание: P-CH MOSFET 20V 3.3A 108mR SO Surface Mount
Производитель Vishay(Siliconix)
Статус производства Производится (VOLUME PRODUCTION)

Дополнительная информация

P-channel MOSFET, 20V drain-source voltage, 3.3A continuous drain current, and 108mΩ drain-to-source resistance. Features include 18ns turn-on delay, 40ns fall time, and 660pF input capacitance. This surface-mount component operates from -55°C to 150°C with a maximum power dissipation of 2.8W. Packaged in an 8-SOIC case, it is RoHS compliant.
RoHS Compliant
Mount Surface Mount
Width 4mm
Height 1.5mm
Length 5mm
Series LITTLE FOOT®
Weight 0.006596oz
Polarity P-CHANNEL
Fall Time 40ns
Packaging Tape and Reel
Rds On Max 108mR
Package/Case SO
RoHS Compliant Yes
Package Quantity 2500
Input Capacitance 660pF
Number of Channels 1
Turn-On Delay Time 18ns
Radiation Hardening No
Turn-Off Delay Time 18ns
Max Power Dissipation 2.8W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 108mR
Gate to Source Voltage (Vgs) 12V
Continuous Drain Current (ID) 3.3A
Drain to Source Voltage (Vdss) 20V

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