SI4825DDY-T1-GE3
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Краткое описание:
P-CH MOSFET, 30V, 10.9A, 12.5mR, 8-SOIC, SM
Дополнительная информация
P-channel MOSFET, 30V Vdss, 10.9A continuous drain current, and 12.5mR drain-source on-resistance. Features a 1.4V threshold voltage, 2.55nF input capacitance, and 48ns turn-on delay. This surface-mount device operates from -55°C to 150°C with a 2.7W maximum power dissipation. Packaged in an 8-pin SOIC for tape and reel distribution.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.5mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.006596oz |
| Polarity | P-CHANNEL |
| Fall Time | 19ns |
| Packaging | Tape and Reel |
| Rds On Max | 12.5mR |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 2.55nF |
| Power Dissipation | 2.7W |
| Threshold Voltage | -1.4V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 48ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 34ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 2.7W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 12.5mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 10.9A |
| Drain to Source Voltage (Vdss) | -30V |
| Drain-source On Resistance-Max | 12.5MR |
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