SI4830ADY-T1-E3
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Краткое описание:
2 N-Ch MOSFET 30V 5.7A 22mR SOIC Surface Mount
Дополнительная информация
Surface mount N-channel MOSFET with 30V drain-source voltage and 5.7A continuous drain current. Features low 22mΩ drain-source on-resistance, 1.1W maximum power dissipation, and operates across a -55°C to 150°C temperature range. This component offers fast switching with turn-on delay of 9ns and fall time of 10ns, packaged in SOIC for tape and reel delivery.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | SI4 |
| Weight | 0.006596oz |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 22mR |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Number of Channels | 2 |
| Turn-On Delay Time | 9ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 19ns |
| Max Power Dissipation | 1.1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 22mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 5.7A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 22mR |
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