SI4830CDY-T1-GE3
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Краткое описание:
2-Ch N-Ch JFET, 30V, 8A ID, 20mR RdsOn, SOIC
Дополнительная информация
Surface mount N-channel JFET with 30V drain-source breakdown voltage and 8A continuous drain current. Features 20mΩ maximum drain-source on-resistance, 950pF input capacitance, and 1V threshold voltage. Operates across a -55°C to 150°C temperature range with a maximum power dissipation of 2.9W. Includes 10ns fall time, 17ns turn-on delay, and 19ns turn-off delay. This component is HALOGEN FREE and ROHS COMPLIANT.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 0.157inch |
| Height | 0.061inch |
| Length | 0.196inch |
| Series | LITTLE FOOT® |
| Weight | 0.01787oz |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 20mR |
| Package/Case | SOIC |
| Polarization | N |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 950pF |
| Power Dissipation | 1.1W |
| Threshold Voltage | 1V |
| Number of Channels | 2 |
| Turn-On Delay Time | 17ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 19ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 2.9W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 20mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 8A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 20MR |
| Drain to Source Breakdown Voltage | 30V |
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