SI4834CDY-T1-E3
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Краткое описание:
N-CH MOSFET 30V 8A 20mR SOIC Surface Mount
Дополнительная информация
N-channel MOSFET featuring 30V drain-source voltage and 8A continuous drain current. Offers low 20mΩ drain-source resistance at 10V Vgs, with a maximum power dissipation of 2W. This surface-mount component, packaged in SOIC, boasts fast switching speeds with a 10ns fall time and 17ns turn-on delay. Operating temperature range spans from -55°C to 150°C, and it is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Packaging | Tape and Reel |
| Rds On Max | 20mR |
| Nominal Vgs | 3V |
| Termination | SMD/SMT |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 950pF |
| Turn-On Delay Time | 17ns |
| Dual Supply Voltage | 30V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 18ns |
| Max Power Dissipation | 2W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 20mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 8A |
| Drain to Source Voltage (Vdss) | 30V |
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