SI4835DDY-T1-E3
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Краткое описание:
P-Channel JFET, 30V, 8.7A ID, 18mR RDS(on), SOIC
Дополнительная информация
P-channel JFET, surface mount, SOIC package. Features 8.7A continuous drain current, -30V drain-source voltage, and 18mΩ drain-source on-resistance. Operates with a gate-source voltage up to 25V and a threshold voltage of -3V. Offers fast switching with turn-on delay of 44ns and fall time of 15ns. Maximum power dissipation is 2.5W, with operating temperatures from -55°C to 150°C. RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.5mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.006596oz |
| Polarity | P-CHANNEL |
| Fall Time | 15ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 3R |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 360pF |
| Power Dissipation | 2.5W |
| Threshold Voltage | -3V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 44ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 28ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 2.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 18mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 8.7A |
| Drain to Source Voltage (Vdss) | -30V |
| Drain-source On Resistance-Max | 18MR |
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