SI4835DDY-T1-GE3
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Краткое описание:
P-Channel JFET, 30V, 8.7A ID, 18mR Rds(on), SOIC
Дополнительная информация
P-channel, silicon, surface-mount field-effect transistor with 8.7A continuous drain current and -30V drain-to-source voltage. Features 18mΩ maximum drain-source on-resistance, 1.96nF input capacitance, and 2.5W power dissipation. Operates across a -55°C to 150°C temperature range. Packaged in SOIC for tape and reel mounting.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.5mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.006596oz |
| Polarity | P-CHANNEL |
| Fall Time | 15ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 18mR |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 1.96nF |
| Power Dissipation | 2.5W |
| Threshold Voltage | -3V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 44ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 28ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 2.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 18mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 8.7A |
| Drain to Source Voltage (Vdss) | -30V |
| Drain-source On Resistance-Max | 18mR |
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