SI4838DY-T1-E3
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Краткое описание:
N-CH JFET, 12V, 17A, 3mR RdsOn, SOP-8
Дополнительная информация
N-channel, small-signal MOSFET for general-purpose applications. Features a 12V drain-to-source breakdown voltage and a maximum continuous drain current of 17A. Offers a low drain-source on-resistance of 3mR. Operates within a temperature range of -55°C to 150°C and is housed in a surface-mount SO package. RoHS compliant and supplied on tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.006596oz |
| Polarity | N-CHANNEL |
| Fall Time | 70ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 3mR |
| Nominal Vgs | 600mV |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Power Dissipation | 1.6W |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 40ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 140ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 1.6W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 3mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 17A |
| Drain to Source Voltage (Vdss) | 12V |
| Drain-source On Resistance-Max | 3mR |
| Drain to Source Breakdown Voltage | 12V |
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