SI4840BDY-T1-E3
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N-Ch MOSFET, 40V, 19A, 9mR, SOIC-8, Surface Mount
Дополнительная информация
Single N-Channel Power MOSFET, SOIC-8 package, featuring 40V drain-source voltage and 9mΩ maximum drain-source on-resistance. This surface mount component offers a continuous drain current of 19A and a maximum power dissipation of 6W. It operates within a temperature range of -55°C to 150°C and includes fast switching characteristics with 10ns turn-on and 10ns fall times. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.006596oz |
| Current | 19A |
| Voltage | 40V |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 9mR |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 2nF |
| Power Dissipation | 2.5W |
| Threshold Voltage | 1V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 10ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 30ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 6W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 9mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 19A |
| Drain to Source Voltage (Vdss) | 40V |
| Drain-source On Resistance-Max | 9MR |
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