SI4842BDY-T1-E3

Не рекомендуется для новых проектов
SI4842BDY-T1-E3 - Vishay(Siliconix)
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Краткое описание: N-CH JFET 30V 28A 4.2mR SO-8 Surface Mount
Производитель Vishay(Siliconix)
Статус производства Не рекомендуется для новых проектов (NOT RECOMMENDED)

Дополнительная информация

N-channel, small-signal MOSFET for general-purpose applications. Features a 30V drain-source voltage and 28A continuous drain current. Offers a low 4.2mΩ drain-source on-resistance. Operates across a -55°C to 150°C temperature range. Packaged in an 8-pin SO package for surface mounting.
RoHS Compliant
Mount Surface Mount
Width 4mm
Height 1.55mm
Length 5mm
Series TrenchFET®
Weight 0.006596oz
Polarity N-CHANNEL
Fall Time 13ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 4.2mR
Nominal Vgs 1.4V
Package/Case SO
RoHS Compliant Yes
Package Quantity 1
Input Capacitance 3.65nF
Power Dissipation 6.25W
Number of Channels 1
Number of Elements 1
Turn-On Delay Time 125ns
Turn-Off Delay Time 38ns
Reach SVHC Compliant Unknown
Max Power Dissipation 6.25W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 4.2mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 28A
Drain to Source Voltage (Vdss) 30V
Drain-source On Resistance-Max 4.2mR

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