SI4842BDY-T1-GE3
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Краткое описание:
N-Channel JFET, 30V, 28A, 4.2mR Rds(on), SOP-8
Дополнительная информация
N-channel MOSFET, surface mount, in an SO package. Features 30V drain-source voltage, 28A continuous drain current, and 4.2mΩ drain-source resistance. Operates from -55°C to 150°C with a maximum power dissipation of 6.25W. Includes 3.65nF input capacitance, 125ns turn-on delay, and 38ns turn-off delay. RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.006596oz |
| Polarity | N-CHANNEL |
| Fall Time | 13ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 4.2mR |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 3.65nF |
| Number of Channels | 1 |
| Turn-On Delay Time | 125ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 38ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 6.25W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 4.2mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 28A |
| Drain to Source Voltage (Vdss) | 30V |
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