SI4848DY-T1-E3
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Краткое описание:
N-Channel JFET, 150V, 2.7A, 85mR RdsOn, SOP-8
Дополнительная информация
N-channel MOSFET for general-purpose small signal applications. Features 150V drain-to-source breakdown voltage and a continuous drain current of 2.7A. Offers a low drain-source on-resistance of 85mR. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 1.5W. Packaged in an SOP-8 surface-mount case.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 85mR |
| Nominal Vgs | 2V |
| Package/Case | SO |
| Polarization | N |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Power Dissipation | 1.5W |
| Threshold Voltage | 2V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 9ns |
| Turn-Off Delay Time | 24ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 1.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 85mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 2.7A |
| Drain to Source Voltage (Vdss) | 150V |
| Drain-source On Resistance-Max | 85mR |
| Drain to Source Breakdown Voltage | 150V |
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