SI4860DY-T1-E3
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Краткое описание:
N-Channel JFET, 30V, 11A, 8mR Rds(on), SOIC
Дополнительная информация
N-channel, surface-mount MOSFET featuring 30V drain-source voltage and 11A continuous drain current. This general-purpose small signal transistor offers a low 8mΩ drain-source on-resistance and operates within a -55°C to 150°C temperature range. Key specifications include a 1V threshold voltage, 4.5nF input capacitance, and fast switching times with 18ns turn-on and 46ns turn-off delays. Packaged in SOIC for tape and reel distribution, this RoHS compliant component is designed for efficient power management.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Polarity | N-CHANNEL |
| Fall Time | 12ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 8mR |
| Nominal Vgs | 1V |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 4.5nF |
| Threshold Voltage | 1V |
| Turn-On Delay Time | 18ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 46ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 1.6W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 8mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 11A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 8mR |
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