SI4864DY-T1-E3
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Краткое описание:
N-CH JFET 20V 17A 3.5mR SO-8 SM
Дополнительная информация
N-channel, general-purpose small-signal MOSFET with a continuous drain current of 17A and a drain-to-source breakdown voltage of 20V. Features a low drain-source on-resistance of 3.5mΩ, ideal for efficient switching applications. Operates across a wide temperature range from -55°C to 150°C, with a maximum power dissipation of 1.6W. Packaged in an 8-pin SO (SOP) surface-mount package, supplied on tape and reel. RoHS compliant for environmental responsibility.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| Polarity | N-CHANNEL |
| Fall Time | 44ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 3.5mR |
| Nominal Vgs | 600mV |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Number of Channels | 1 |
| Turn-On Delay Time | 40ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 150ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 1.6W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 3.5mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 17A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 3.5mR |
| Drain to Source Breakdown Voltage | 20V |
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