SI4866BDY-T1-E3
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Краткое описание:
N-CH MOSFET 12V 16.1A 5.3mR SO Surface Mount
Дополнительная информация
N-CHANNEL MOSFET, 12V Drain-Source Voltage, 16.1A Continuous Drain Current, and 5.3mR Max Drain-Source On-Resistance. This surface mount component features a 4.45W Max Power Dissipation and operates across a -55°C to 150°C temperature range. Designed with a 5.02nF input capacitance and fast switching times, including a 13ns turn-on delay and 9ns fall time, it is suitable for demanding applications. The SO package ensures efficient thermal management and compatibility with automated assembly processes.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.5mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.006596oz |
| Polarity | N-CHANNEL |
| Fall Time | 9ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 5.3mR |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 5.02nF |
| Number of Channels | 1 |
| Turn-On Delay Time | 13ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 57ns |
| Max Power Dissipation | 4.45W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 5.3mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 16.1A |
| Drain to Source Voltage (Vdss) | 12V |
| Drain-source On Resistance-Max | 5.3MR |
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