SI4866BDY-T1-GE3
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Краткое описание:
N-Channel JFET, 12V, 21.5A, 5.3mR Rds On, SOIC-8
Дополнительная информация
N-channel JFET for general-purpose small signal applications. Features a 12V drain-source voltage (Vdss) and a continuous drain current (ID) of 21.5A. Offers a low drain-source on-resistance (Rds On) of 5.3mR. Operates with a gate-source voltage (Vgs) of 8V and a threshold voltage of 1V. Packaged in a surface-mount SOIC-8 case, this component is halogen-free and RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.5mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.006596oz |
| Polarity | N-CHANNEL |
| Fall Time | 9ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 5.3mR |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 5.02nF |
| Threshold Voltage | 1V |
| Number of Channels | 1 |
| Turn-On Delay Time | 13ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 57ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 4.45W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 5.3mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 21.5A |
| Drain to Source Voltage (Vdss) | 12V |
| Drain-source On Resistance-Max | 5.3mR |
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