SI4866DY-T1-E3
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Краткое описание:
12V 11A N-CH MOSFET SOIC N 5.5mR RdsOn
Дополнительная информация
N-channel MOSFET for surface mount applications, featuring 12V drain-source breakdown voltage and 11A continuous drain current. Offers a low 5.5mΩ maximum drain-source on-resistance at a nominal Vgs of 600mV. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 1.6W. Packaged in an 8-pin SOIC N for tape and reel distribution.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.006596oz |
| Polarity | N-CHANNEL |
| Fall Time | 35ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 5.5mR |
| Nominal Vgs | 600mV |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Power Dissipation | 1.6W |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 28ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 82ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 1.6W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 5.5mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 11A |
| Drain to Source Voltage (Vdss) | 12V |
| Drain-source On Resistance-Max | 5.5mR |
| Drain to Source Breakdown Voltage | 12V |
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