SI4876DY-T1-E3

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SI4876DY-T1-E3 - Vishay(Siliconix)
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Краткое описание: N-CH JFET 20V 14A SO-8
Производитель Vishay(Siliconix)
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

N-channel MOSFET, surface mount, designed for general-purpose small signal applications. Features a continuous drain current of 14A and a drain-to-source breakdown voltage of 20V. Offers a low drain-source on-resistance of 5mR. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 1.6W. Packaged in tape and reel, this RoHS compliant component is supplied in an SOP-8 package.
RoHS Compliant
Mount Surface Mount
Width 0.157inch
Height 0.061inch
Length 0.196inch
Series TrenchFET®
Polarity N-CHANNEL
Fall Time 30ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 5mR
Package/Case SO
Polarization N
RoHS Compliant Yes
DC Rated Voltage 20V
Package Quantity 2500
Power Dissipation 3.6W
Turn-On Delay Time 40ns
Turn-Off Delay Time 175ns
Max Power Dissipation 1.6W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 5mR
Gate to Source Voltage (Vgs) 12V
Continuous Drain Current (ID) 14A
Drain to Source Voltage (Vdss) 20V
Drain-source On Resistance-Max 34mR
Drain to Source Breakdown Voltage 20V

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