SI4884BDY-T1-GE3
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Краткое описание:
N-Channel JFET, 30V, 16.5A, 9mR Rds(on), SOP-8
Дополнительная информация
N-channel MOSFET, TrenchFET® series, for general purpose small signal applications. Features 30V drain-source voltage, 16.5A continuous drain current, and a low 9mΩ drain-source on-resistance. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 4.45W. Packaged in a RoHS compliant, surface-mount SOP-8 package.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| Polarity | N-CHANNEL |
| Fall Time | 8ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 9mR |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 1.525nF |
| Number of Channels | 1 |
| Turn-On Delay Time | 8ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 22ns |
| Max Power Dissipation | 4.45W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 9mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 16.5A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 9mR |
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