SI4894BDY-T1-E3
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Краткое описание:
N-CH JFET 30V 8.9A 11mR SOIC FET
Дополнительная информация
N-channel JFET, designed for general-purpose small signal applications. Features a 30V drain-source voltage rating and a continuous drain current of 8.9A. Offers a low 11mΩ drain-source on-resistance. Operates within a temperature range of -55°C to 150°C. Packaged in a RoHS compliant SOIC package for surface mounting.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.006596oz |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 11mR |
| Nominal Vgs | 3V |
| Termination | SMD/SMT |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 1.58nF |
| Number of Channels | 1 |
| Turn-On Delay Time | 13ns |
| Dual Supply Voltage | 30V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 33ns |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 1.4W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 11mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 8.9A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 11mR |
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