SI4894BDY-T1-GE3

Не рекомендуется для новых проектов
SI4894BDY-T1-GE3 - Vishay(Siliconix)
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Краткое описание: N-CH JFET 30V 8.9A 11mR SOP-8 Surface Mount
Производитель Vishay(Siliconix)
Статус производства Не рекомендуется для новых проектов (NOT RECOMMENDED)

Дополнительная информация

N-channel MOSFET, general purpose small signal transistor with 30V drain-source voltage and 8.9A continuous drain current. Features low 11mΩ drain-to-source resistance and 1.58nF input capacitance. Operates from -55°C to 150°C with a 1.4W maximum power dissipation. Packaged in a surface-mount SO package, this component is halogen-free and RoHS compliant.
RoHS Compliant
Mount Surface Mount
Width 4mm
Height 1.55mm
Length 5mm
Series TrenchFET®
Weight 0.006596oz
Polarity N-CHANNEL
Fall Time 10ns
Packaging Tape and Reel
Rds On Max 11mR
Package/Case SO
RoHS Compliant Yes
Package Quantity 1
Input Capacitance 1.58nF
Threshold Voltage 3V
Number of Channels 1
Turn-On Delay Time 13ns
Radiation Hardening No
Turn-Off Delay Time 33ns
Reach SVHC Compliant Unknown
Max Power Dissipation 1.4W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 11mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 8.9A
Drain to Source Voltage (Vdss) 30V

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