SI4896DY-T1-E3
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Краткое описание:
N-CH JFET 80V 9.5A 16.5mR SOIC
Дополнительная информация
N-channel MOSFET, TrenchFET® series, designed for general-purpose small signal applications. Features 80V drain-source breakdown voltage and 16.5mΩ maximum drain-source on-resistance. Continuous drain current capability of 9.5A. Operates within a temperature range of -55°C to 150°C. Packaged in a RoHS compliant SOIC surface-mount package.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| Polarity | N-CHANNEL |
| Fall Time | 11ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 16.5mR |
| Nominal Vgs | 2V |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Threshold Voltage | 2V |
| Number of Channels | 1 |
| Turn-On Delay Time | 17ns |
| Turn-Off Delay Time | 40ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 1.56W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 16.5mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 9.5A |
| Drain to Source Voltage (Vdss) | 80V |
| Drain-source On Resistance-Max | 16.5mR |
| Drain to Source Breakdown Voltage | 80V |
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