SI4900DY-T1-E3
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Краткое описание:
N-Channel JFET, 60V, 4.3A ID, 58mR Rds On, SOIC-8
Дополнительная информация
N-Channel Silicon MOSFET, 2-Element, SOIC-8 package. Features 60V Drain-Source Voltage (Vdss), 4.3A Continuous Drain Current (ID), and 58mΩ Drain-Source On Resistance (Rds On Max). Operates from -55°C to 150°C with a maximum power dissipation of 3.1W. Includes 10ns turn-on and fall times, 20ns turn-off delay, and 665pF input capacitance. RoHS compliant and surface mountable.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.006596oz |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 58mR |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 665pF |
| Number of Channels | 2 |
| Turn-On Delay Time | 10ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 20ns |
| Max Power Dissipation | 3.1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 58mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 4.3A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 58mR |
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