SI4904DY-T1-E3
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Краткое описание:
2 N-Ch MOSFET 40V 8A 16mR SO Surface Mount
Дополнительная информация
N-Channel MOSFET, 40V Drain-Source Voltage (Vdss), 8A Continuous Drain Current (ID). Features 16mΩ Max Drain-Source On-Resistance (Rds On Max) and 3.25W Max Power Dissipation. This surface mount component, housed in an SO package, offers 2 N-Channel FETs with a 150°C max operating temperature. Includes 19ns fall time and 62ns turn-off delay time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.5mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.006596oz |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 19ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 16mR |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 2.39nF |
| Number of Channels | 2 |
| Turn-On Delay Time | 88ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 62ns |
| Max Power Dissipation | 3.25W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 16mR |
| Gate to Source Voltage (Vgs) | 16V |
| Continuous Drain Current (ID) | 8A |
| Drain to Source Voltage (Vdss) | 40V |
| Drain-source On Resistance-Max | 16mR |
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