SI4904DY-T1-GE3
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Краткое описание:
N-Channel JFET, 40V, 8A, 16mR Rds On, SOIC-8
Дополнительная информация
N-Channel Silicon Metal-oxide Semiconductor FET, a 2-element JFET with 40V Drain to Source Voltage (Vdss) and 8A Continuous Drain Current (ID). Features 16mR Drain to Source Resistance (Rds On Max), 2V Threshold Voltage, and 16V Gate to Source Voltage (Vgs). This surface mount device, packaged in SOIC-8 (MS-012AA), offers a max power dissipation of 2W and operates from -55°C to 150°C. Includes 19ns fall time, 62ns turn-off delay, and 88ns turn-on delay.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.5mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.006596oz |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 19ns |
| Packaging | Tape and Reel |
| Rds On Max | 16mR |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 2.39nF |
| Threshold Voltage | 2V |
| Number of Channels | 2 |
| Turn-On Delay Time | 88ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 62ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 2W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 16mR |
| Gate to Source Voltage (Vgs) | 16V |
| Continuous Drain Current (ID) | 8A |
| Drain to Source Voltage (Vdss) | 40V |
