SI4914BDY-T1-E3
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Краткое описание:
N-Channel JFET, 30V, 8A ID, 23mR RdsOn, SO Package
Дополнительная информация
N-Channel Silicon JFET, 2-element, 30V drain-source voltage, 8A continuous drain current, and 21mΩ maximum drain-source on-resistance. This surface-mount device features a 2-element N-channel configuration with a maximum power dissipation of 3.1W and operating temperatures from -55°C to 150°C. The SO package offers a compact footprint with dimensions of 5mm length, 4mm width, and 1.5mm height. Includes fast switching characteristics with turn-on delay time of 10ns and fall time of 9ns.
| RoHS | Not CompliantNo |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.5mm |
| Length | 5mm |
| Series | LITTLE FOOT® |
| Weight | 0.01787oz |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 9ns |
| Packaging | Tape and Reel |
| Rds On Max | 21mR |
| Package/Case | SO |
| RoHS Compliant | No |
| Package Quantity | 2500 |
| Number of Channels | 2 |
| Turn-On Delay Time | 10ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 16ns |
| Max Power Dissipation | 3.1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 23mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 8A |
| Drain to Source Voltage (Vdss) | 30V |
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