SI4916DY-T1-E3

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SI4916DY-T1-E3 - Vishay(Siliconix)
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Краткое описание: 2 N-CH MOSFET 30V 10.5A 18mR SOIC Surface Mount
Производитель Vishay(Siliconix)
Статус производства Производится (VOLUME PRODUCTION)

Дополнительная информация

Dual N-channel MOSFET, 30V Vds, 10.5A continuous drain current, and 18mΩ max Rds(on). Features a 9ns turn-on delay and 27ns turn-off delay, with a 13ns fall time. Surface mountable in an 8-SOIC package, this component operates from -55°C to 150°C with a max power dissipation of 3.5W. RoHS compliant and lead-free.
RoHS Compliant
Mount Surface Mount
Width 4mm
Height 1.55mm
Length 5mm
Series LITTLE FOOT®
Weight 0.006596oz
FET Type 2 N-Channel
Polarity N-CHANNEL
Fall Time 13ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 18mR
Package/Case SOIC
RoHS Compliant Yes
Package Quantity 1
Number of Channels 2
Turn-On Delay Time 9ns
Radiation Hardening No
Turn-Off Delay Time 27ns
Max Power Dissipation 3.5W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 18mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 10.5A
Drain to Source Voltage (Vdss) 30V
Drain-source On Resistance-Max 18mR

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