SI4920DY-T1-E3
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Краткое описание:
30V 6.9A N-CH MOSFET 25mR SOIC N-Channel 2-FET
Дополнительная информация
N-channel MOSFET transistor featuring 30V drain-source breakdown voltage and 6.9A continuous drain current. This surface-mount component offers a low 25mΩ drain-source on-resistance and operates within a -55°C to 150°C temperature range. With a 2W maximum power dissipation and 790pF input capacitance, it is packaged in an 8-pin SOIC for tape and reel delivery. The transistor exhibits fast switching characteristics with a 12ns turn-on delay and 15ns fall time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 0.157inch |
| Height | 0.061inch |
| Length | 0.196inch |
| Series | TrenchFET® |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 15ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 25mR |
| Package/Case | SO |
| Polarization | N |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 790pF |
| Power Dissipation | 2W |
| Number of Elements | 2 |
| Turn-On Delay Time | 12ns |
| Turn-Off Delay Time | 60ns |
| Max Power Dissipation | 2W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 25mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 6.9A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 25mR |
| Drain to Source Breakdown Voltage | 30V |
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