SI4922BDY-T1-E3
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Краткое описание:
2N-CH MOSFET 30V 8A 16mR SOIC
Дополнительная информация
Dual N-channel MOSFET featuring 30V drain-source voltage and 8A continuous drain current. Offers low 16mΩ drain-source on-resistance and 1.8V threshold voltage. Surface mountable in an 8-SOIC package, this component boasts fast switching times with a 13ns turn-on delay and 54ns fall time. Operates across a wide temperature range from -50°C to 150°C with 2W maximum power dissipation.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.006596oz |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 54ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 16mR |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 2.07nF |
| Threshold Voltage | 1.8V |
| Number of Channels | 2 |
| Turn-On Delay Time | 13ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 68ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 2W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -50°C |
| Drain to Source Resistance | 16mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 8A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 16mR |
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