SI4925BDY
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Краткое описание:
P-CH MOSFET, 30V, 5.3A, 25mR, SO, 2-CH
Дополнительная информация
P-channel MOSFET transistor in SO package, featuring a continuous drain current of 5.3A and a drain-to-source resistance of 25mR. Offers a drain-to-source voltage of -30V and a maximum power dissipation of 1.1W. Operates across a temperature range of -55°C to 150°C with a nominal gate-to-source voltage of -3V. Includes fast switching characteristics with a turn-on delay time of 9ns and a fall time of 34ns.
| RoHS | Not Compliant |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | SI4 |
| Weight | 0.002998oz |
| Polarity | P-CHANNEL |
| Fall Time | 34ns |
| Nominal Vgs | -3V |
| Termination | SMD/SMT |
| Package/Case | SO |
| RoHS Compliant | No |
| Package Quantity | 100 |
| Threshold Voltage | -3V |
| Number of Channels | 2 |
| Turn-On Delay Time | 9ns |
| Dual Supply Voltage | -30V |
| On-State Resistance | 41mR |
| Turn-Off Delay Time | 60ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 1.1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 25mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 5.3A |
| Drain to Source Voltage (Vdss) | -30V |
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