SI4925BDY-T1-E3
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Краткое описание:
P-Channel JFET, 30V, 5.3A, 25mR Rds(on), 2-Ch, SOP-8
Дополнительная информация
Dual-channel P-channel MOSFET for general-purpose small signal applications. Features a continuous drain current of 5.3A and a drain-to-source breakdown voltage of -30V. Offers low on-resistance (Rds On Max) of 25mR and a maximum power dissipation of 1.1W. Packaged in a surface-mount SOP-8 (SO) package, this RoHS compliant component operates within a temperature range of -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.006596oz |
| Polarity | P-CHANNEL |
| Fall Time | 34ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 25mR |
| Nominal Vgs | -1V |
| Termination | SMD/SMT |
| Package/Case | SO |
| Polarization | P |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Power Dissipation | 1.1W |
| Threshold Voltage | -1V |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Turn-On Delay Time | 9ns |
| Dual Supply Voltage | 30V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 60ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 1.1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 25mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 5.3A |
| Drain to Source Voltage (Vdss) | -30V |
| Drain to Source Breakdown Voltage | -30V |
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