SI4925DDY-T1-GE3
Увеличить
Краткое описание:
P-Channel JFET, 30V, 7.3A ID, 29mR Rds On, SOIC
Дополнительная информация
P-Channel Silicon Metal-oxide Semiconductor FET, 2-Element, Surface Mount SOIC package. Features 7.3A continuous drain current, -30V drain-to-source voltage, and 29mΩ maximum drain-to-source on-resistance. Operates from -55°C to 150°C with a maximum power dissipation of 5W. Includes 1.35nF input capacitance and 16ns fall time. HALOGEN FREE and ROHS COMPLIANT.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.5mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.006596oz |
| FET Type | 2 N-Channel |
| Polarity | P-CHANNEL |
| Fall Time | 16ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 29mR |
| Nominal Vgs | -1V |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 1.35nF |
| Power Dissipation | 2.5W |
| Threshold Voltage | -3V |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Turn-On Delay Time | 42ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 40ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 29mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 7.3A |
| Drain to Source Voltage (Vdss) | -30V |
| Drain-source On Resistance-Max | 29mR |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
