SI4931DY-T1-E3
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Краткое описание:
P-CH JFET 12V 6.7A 18mR SOIC N T/R
Дополнительная информация
P-Channel MOSFET, 12V Drain-to-Source Voltage (Vdss), 6.7A Continuous Drain Current (ID), and 18mΩ Drain to Source Resistance (Rds On Max). Features a 46ns fall time and 25ns turn-on delay time, with a maximum power dissipation of 1.1W. This surface mount component is housed in an 8-pin SOIC package, operating from -55°C to 150°C, and is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.006596oz |
| Polarity | P-CHANNEL |
| Fall Time | 46ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 18mR |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Number of Channels | 2 |
| Turn-On Delay Time | 25ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 230ns |
| Max Power Dissipation | 1.1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 18mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 6.7A |
| Drain to Source Voltage (Vdss) | 12V |
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