SI4932DY-T1-GE3
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Краткое описание:
30V 8A 2-CH N-CH MOSFET SO 15mR RdsOn
Дополнительная информация
Dual N-channel MOSFET featuring 30V drain-source voltage and 8A continuous drain current. Offers low 15mΩ drain-source on-resistance and 3.2W maximum power dissipation. Surface mountable in an 8-SOIC package with a compact 5mm x 4mm x 1.55mm footprint. Operates across a wide temperature range from -55°C to 150°C, with fast switching characteristics including 21ns turn-on and 26ns turn-off delay times. Lead-free and RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.006596oz |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 8ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 15mR |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 1.75nF |
| Number of Channels | 2 |
| Turn-On Delay Time | 21ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 26ns |
| Max Power Dissipation | 3.2W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 15mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 8A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 15MR |
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