SI4936ADY-T1-GE3
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Краткое описание:
N-Channel JFET, 30V, 4.4A ID, 36mR RdsOn, SOP-8
Дополнительная информация
N-Channel Silicon MOSFET, featuring a 30V drain-source voltage (Vdss) and 4.4A continuous drain current (ID). This surface-mount device offers a low drain-source on-resistance (Rds On) of 36mΩ and operates across a wide temperature range from -55°C to 150°C. With a 2-element configuration and 5ns fall time, it is designed for efficient switching applications. The component is HALOGEN FREE and ROHS COMPLIANT, packaged in an SOP-8 case.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 5ns |
| Packaging | Tape and Reel |
| Rds On Max | 36mR |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Number of Channels | 2 |
| Turn-On Delay Time | 6ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 30ns |
| Max Power Dissipation | 1.1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 36mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 4.4A |
| Drain to Source Voltage (Vdss) | 30V |
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