SI4936BDY-T1-E3
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Краткое описание:
Dual N-Ch MOSFET, 30V, 6.9A, 35mR Rds On, SOIC
Дополнительная информация
Dual N-channel MOSFET transistor featuring 30V drain-source voltage and 6.9A continuous drain current. Offers a low 35mΩ maximum drain-source on-resistance at a nominal 3V gate-source voltage. This surface-mount device operates within a -55°C to 150°C temperature range and is packaged in an 8-pin SOIC for tape and reel distribution.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 25ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 35mR |
| Nominal Vgs | 3V |
| Termination | SMD/SMT |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 530pF |
| Threshold Voltage | 3V |
| Number of Channels | 2 |
| Turn-On Delay Time | 5ns |
| Dual Supply Voltage | 30V |
| On-State Resistance | 51mR |
| Radiation Hardening | No |
| Turn-Off Delay Time | 12ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 2.8W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 35mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 6.9A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 35mR |
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