SI4936CDY-T1-GE3
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Краткое описание:
N-Channel JFET, 30V, 5A ID, 40mR Rds On, SO Package
Дополнительная информация
N-Channel Silicon MOSFET, 2-Element, Surface Mount, SOP-8 package. Features 30V Drain-Source Voltage (Vdss), 5A Continuous Drain Current (ID), and 40mΩ Max Drain-Source On Resistance (Rds On). Operates with a 3V Threshold Voltage and 20V Gate-to-Source Voltage (Vgs). Offers 13ns Fall Time and 16ns Turn-Off Delay Time. RoHS compliant and HALOGEN FREE.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.006596oz |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 13ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 40mR |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 325pF |
| Power Dissipation | 1.7W |
| Threshold Voltage | 3V |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Turn-On Delay Time | 12ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 16ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 2.3W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 2.8R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 5A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 40mR |
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