SI4943BDY-T1-GE3
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Краткое описание:
P-CHANNEL TrenchFET MOSFET, 6.3A, 20V, 1.1W, SO Package
Дополнительная информация
The SI4943BDY-T1-GE3 is a P-channel TrenchFET MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 1.1W and a continuous drain current of 6.3A. The device is packaged in a SO package and is surface mountable. It is RoHS compliant and has a threshold voltage of -1V.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Weight | 0.006596oz |
| Polarity | P-CHANNEL |
| Fall Time | 10ns |
| Packaging | Tape and Reel |
| Rds On Max | 19mR |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Threshold Voltage | -1V |
| Number of Channels | 2 |
| Turn-On Delay Time | 11ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 94ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 1.1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 19mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 6.3A |
| Drain to Source Voltage (Vdss) | -20V |
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