SI4943CDY-T1-GE3
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Краткое описание:
P-Channel JFET, 20V, 8A, 19.2mR Rds(on), SOP-8
Дополнительная информация
P-channel, 2-element, silicon MOSFET for surface mount applications. Features a continuous drain current of 8A and a drain-source voltage of -20V. Offers a low drain-source on-resistance of 19.2mR. Operates within a temperature range of -50°C to 150°C with a maximum power dissipation of 3.1W. Packaged in tape and reel for automated assembly.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.5mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.006596oz |
| Polarity | P-CHANNEL |
| Fall Time | 15ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 19.2mR |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 1.945nF |
| Threshold Voltage | -1V |
| Number of Channels | 2 |
| Turn-On Delay Time | 50ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 29ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 3.1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -50°C |
| Drain to Source Resistance | 19.2mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 8A |
| Drain to Source Voltage (Vdss) | -20V |
| Drain-source On Resistance-Max | 19.2MR |
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