SI4946BEY-T1-E3
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Краткое описание:
N-Channel MOSFET, 60V, 6.5A, 41mR Rds On, 2-Element, SOP-8
Дополнительная информация
N-Channel Power MOSFET, featuring a 60V drain-source breakdown voltage and a maximum continuous drain current of 6.5A. This surface-mount device offers a low drain-source on-resistance of 41mΩ at a 10V gate-source voltage. With a 2.4V threshold voltage and 2 N-channel elements, it provides fast switching characteristics with turn-on and fall times of 10ns. The component operates within a temperature range of -50°C to 175°C and is packaged in a RoHS compliant SOP-8 package.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 41mR |
| Package/Case | SO |
| Polarization | N |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 840pF |
| Power Dissipation | 2.4W |
| Threshold Voltage | 2.4V |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Turn-On Delay Time | 10ns |
| Turn-Off Delay Time | 25ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 3.7W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -50°C |
| Drain to Source Resistance | 41mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 6.5A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 41mR |
| Drain to Source Breakdown Voltage | 60V |
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