SI4948BEY-T1-E3
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Краткое описание:
P-Channel JFET, 60V, 2.4A ID, 120mR Rds(on), SO Package
Дополнительная информация
P-channel, 2-element silicon JFET with a continuous drain current of 2.4A and a drain-source breakdown voltage of -60V. Features a low drain-source on-resistance of 120mΩ, operating over a temperature range of -55°C to 175°C. This surface-mount device offers fast switching with turn-on delay time of 10ns and fall time of 15ns, packaged in an SOIC-8 case.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.006596oz |
| Polarity | P-CHANNEL |
| Fall Time | 15ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 120mR |
| Nominal Vgs | -3V |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Power Dissipation | 1.4W |
| Threshold Voltage | -3V |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Turn-On Delay Time | 10ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 50ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 1.4W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 120mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 2.4A |
| Drain to Source Voltage (Vdss) | -60V |
| Drain-source On Resistance-Max | 120mR |
| Drain to Source Breakdown Voltage | -60V |
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